Porous Silicon Carbide and Gallium Nitride. Randall Feenstra M. и др.
- Тип: Текст PDF
- Авторы:
- Издательство: John Wiley & Sons Limited(2019)
- ISBN: 9780470751824
- Страниц: 340
- Язык: Английский
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- Жанры: Техническая литература
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Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more